DN2535N3-G 数据手册
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技术规格
- Manufacturer: Microchip Technology
- Series: -
- Packaging: Bulk
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350V
- Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
- Vgs(th) (Max) @ Id: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92 (TO-226)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- detail: N-Channel 350V 120mA (Tj) 1W (Tc) Through Hole TO-92 (TO-226)